The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2012

Filed:

Feb. 20, 2009
Applicants:

Akiko Fujisawa, Hitachinaka, JP;

Hiroyuki Kobayashi, Mito, JP;

Eiko Nakazawa, Mito, JP;

Inventors:

Akiko Fujisawa, Hitachinaka, JP;

Hiroyuki Kobayashi, Mito, JP;

Eiko Nakazawa, Mito, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G21K 5/10 (2006.01); H01J 37/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a charged particle beam device which can effectively restrain misalignment of an optical axis even if a position of an anode is changed. The present invention is a charged particle beam device comprising a cathode provided with a charged particle source which emits a charged particle, an anode which applies an electric field to the emitted charged particle, a charged particle beam deflector which deflects an orbit of a charged particle beam having passed the anode, and a charged particle beam detector which detects the charged particle beam from a sample to which the charged particle is irradiated, wherein a distance changing mechanism which changes a distance between the cathode and the anode, corresponding to a charged particle amount emitted from the charged particle source and a deflection amount control mechanism which detects a condition of the deflector under which the charged particle dose detected from the sample scanned by deflecting the charged particle beam in the changed distance becomes a desired size and controls deflection of the deflector at sample measurement on the basis of the condition are provided.


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