The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Apr. 16, 2008
Lars-ake Ragnarsson, Leuven, BE;
Paul Zimmerman, Cedar Creek, TX (US);
Kazuhiko Yamamoto, Kadoma, JP;
Tom Schram, Rixensart, BE;
Wim Deweerd, San Jose, CA (US);
David Brunco, Tervuren, BE;
Stefan DE Gendt, Wijnegem, BE;
Wilfried Vandervorst, Mechelen, BE;
Lars-Ake Ragnarsson, Leuven, BE;
Paul Zimmerman, Cedar Creek, TX (US);
Kazuhiko Yamamoto, Kadoma, JP;
Tom Schram, Rixensart, BE;
Wim Deweerd, San Jose, CA (US);
David Brunco, Tervuren, BE;
Stefan De Gendt, Wijnegem, BE;
Wilfried Vandervorst, Mechelen, BE;
IMEC, Leuven, BE;
Abstract
One inventive aspect relates to a method for fabricating a high-k dielectric layer. The method comprises depositing onto a substrate a layer of a high-k dielectric material having a first thickness. The high-k dielectric material has a bulk density value and the first thickness is so that the high-k dielectric layer has a density of at least the bulk density value of the high-k dielectric material minus about 10%. The method further comprises thinning the high-k dielectric layer to a second thickness. Another inventive aspect relates to a semiconductor device comprising a high-k dielectric layer as fabricated by the method.