The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8211228 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 03, 2012

Filed:

Oct. 21, 2005
Applicants:

Ryoji Hoshi, Fukushima, JP;

Takahiro Yanagimachi, Fukushima, JP;

Inventors:

Ryoji Hoshi, Fukushima, JP;

Takahiro Yanagimachi, Fukushima, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention is a method for producing a single crystal that is a multi-pulling method for pulling a plurality of single crystals from a raw material melt in a same crucible in a chamber by a Czochralski method, comprising steps of: pulling a single crystal from a raw material melt ; then additionally charging polycrystalline raw material in a residual raw material melt without turning off power of a heater, and melting the polycrystalline raw material; then pulling a next single crystal; and repeating the steps and thereby pulling the plurality of single crystals.


Find Patent Forward Citations

Hoshi, Ryoji. (2012). Method for producing single crystal and a method for producing annealed wafer (U.S. Patent No. 8211228). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8211228

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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