The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Nov. 19, 2008
Chao-chi Chin, Tainan, TW;
Ming-chu King, Hsin-Chu, TW;
Chen Cheng Chou, Shanhua Township, Tainan County, TW;
Chao-Chi Chin, Tainan, TW;
Ming-Chu King, Hsin-Chu, TW;
Chen Cheng Chou, Shanhua Township, Tainan County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A stacked metal-oxide-metal (MOM) capacitor structure and method of forming the same to increase an electrode/capacitor dielectric coupling area to increase a capacitance, the MOM capacitor structure including a plurality of metallization layers in stacked relationship; wherein each metallization layer includes substantially parallel spaced apart conductive electrode line portions having a first intervening capacitor dielectric; and, wherein the conductive electrode line portions are electrically interconnected between metallization layers by conductive damascene line portions formed in a second capacitor dielectric and disposed underlying the conductive electrode line portions.