The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Jul. 30, 2009
Yoshiharu Inoue, Kudamatsu, JP;
Hiroaki Ishimura, Kudamatsu, JP;
Hitoshi Kobayashi, Kudamatsu, JP;
Masunori Ishihara, Kudamatsu, JP;
Toru Ito, Kudamatsu, JP;
Toshiaki Nishida, Kudamatsu, JP;
Yoshiharu Inoue, Kudamatsu, JP;
Hiroaki Ishimura, Kudamatsu, JP;
Hitoshi Kobayashi, Kudamatsu, JP;
Masunori Ishihara, Kudamatsu, JP;
Toru Ito, Kudamatsu, JP;
Toshiaki Nishida, Kudamatsu, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
The invention provides a dry etching method capable of obtaining a good profile with little side etch without receiving the restriction of a micro loading effect. A dry etching method for etching a sample having formed on the surface thereof a pattern with an isolated portion and a dense portion using plasma comprises a first etching step using an etching gas containing a CF-based gas and a nitrogen gas in which an etching rate of a dense portion of the pattern is greater than the etching rate of the isolated portion of the mask pattern, and a second etching step in which the etching rate of the isolated portion of the pattern is greater than the etching rate of the dense portion of the pattern.