The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Sep. 28, 2009
Huang-yi Lin, Tainan, TW;
Jiun-hung Shen, Taipei County, TW;
Chi-horn Pai, Taipei, TW;
Yi-chung Sheng, Tainan, TW;
Shih-chieh Hsu, Taipei County, TW;
Huang-Yi Lin, Tainan, TW;
Jiun-Hung Shen, Taipei County, TW;
Chi-Horn Pai, Taipei, TW;
Yi-Chung Sheng, Tainan, TW;
Shih-Chieh Hsu, Taipei County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for making a semiconductor MOS device is provided. A gate structure is formed on a substrate. A source and a drain are formed in the substrate on both sides of the gate structure. The substrate is then subjected to a pre-amorphization implant (PAI) process. A transitional stress layer is then formed on the substrate. Thereafter, a laser anneal with a first temperature is performed. After the laser anneal, a rapid thermal process is performed with a second temperature that is lower than the first temperature. Subsequently, the transitional stress layer is removed.