The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2012
Filed:
Jun. 14, 2010
Ho-jung Kim, Suwon-si, KR;
In-kyeong Yoo, Yongin-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Chang-jung Kim, Yongin-si, KR;
Myoung-jae Lee, Hwaseong-si, KR;
Ki-ha Hong, Cheonan-si, KR;
Ho-jung Kim, Suwon-si, KR;
In-kyeong Yoo, Yongin-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Chang-jung Kim, Yongin-si, KR;
Myoung-jae Lee, Hwaseong-si, KR;
Ki-ha Hong, Cheonan-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A nonvolatile memory cell may include a bidirectional switch having a first threshold voltage when a forward current is applied to the bidirectional switch and a second threshold voltage when a reverse current is applied to the bidirectional switch; and a variable resistor connected to the bidirectional switch in series. A state of resistance of the variable resistor may be controlled according to voltage applied to the variable resistor. A sum of a magnitude of the first threshold voltage and a magnitude of the second threshold voltage may be greater than a write voltage that is used to perform a write operation on the variable resistor.