The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2012
Filed:
Nov. 11, 2009
Tohru Ishizuka, Annaka, JP;
Norihiro Kobayashi, Annaka, JP;
Hiroji Aga, Annaka, JP;
Nobuhiko Noto, Annaka, JP;
Tohru Ishizuka, Annaka, JP;
Norihiro Kobayashi, Annaka, JP;
Hiroji Aga, Annaka, JP;
Nobuhiko Noto, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A method for manufacturing an SOI wafer having a buried oxide film with a predetermined thickness including performing a heat treatment for reducing a thickness of the buried oxide film on an SOI wafer material having an SOI layer formed on the buried oxide film, wherein a thickness of the SOI layer of the SOI wafer material to be subjected to the heat treatment for reducing the thickness of the buried oxide film is calculated on the basis of a ratio of the thickness of the buried oxide film to be reduced by the heat treatment with respect to a permissible value of an amount of change in an in-plane range of the buried oxide film, the change being caused by the heat treatment, and the SOI wafer material obtained by thinning the thickness of the bond wafer so as to have the calculated thickness of the SOI layer is subjected to the heat treatment for reducing the thickness of the buried oxide film.