The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2012
Filed:
Jun. 08, 2009
Takanobu Takeda, Jyoetsu, JP;
Satoshi Watanabe, Jyoetsu, JP;
Youichi Ohsawa, Jyoetsu, JP;
Masaki Ohashi, Jyoetsu, JP;
Takeshi Kinsho, Jyoetsu, JP;
Takanobu Takeda, Jyoetsu, JP;
Satoshi Watanabe, Jyoetsu, JP;
Youichi Ohsawa, Jyoetsu, JP;
Masaki Ohashi, Jyoetsu, JP;
Takeshi Kinsho, Jyoetsu, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.