The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Dec. 23, 2008
Chung-shi Liu, Hsinchu, TW;
Yung-sheng Chiu, Hsinchu, TW;
Cheng-tung Lin, Hsinchu, TW;
Chen-hua Yu, Hsinchu, TW;
Chung-Shi Liu, Hsinchu, TW;
Yung-Sheng Chiu, Hsinchu, TW;
Cheng-Tung Lin, Hsinchu, TW;
Chen-Hua Yu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device includes at least one first gate dielectric layer over a substrate. A first transition-metal oxycarbide (MCO) containing layer is formed over the at least one first gate dielectric layer, wherein the transition-metal (M) has an atomic percentage of about 40 at. % or more. A first gate is formed over the first transition-metal oxycarbide containing layer. At least one first doped region is formed within the substrate and adjacent to a sidewall of the first gate.