The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Jan. 19, 2011
Applicants:
Masami Shibagaki, Tokyo, JP;
Akihiro Egami, Kawasaki, JP;
Inventors:
Masami Shibagaki, Tokyo, JP;
Akihiro Egami, Kawasaki, JP;
Assignee:
Canon Anelva Corporation, Kawasaki-Shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
Abstract
In an atmosphere in which a silicon carbide (SiC) substrate implanted with impurities is annealed to activate the impurities, by setting a partial pressure of HO to be not larger than 10Pa, preferably not larger than 10Pa, surface irregularity of the silicon carbide (SiC) substrate is controlled to be not greater than 2 nm, more preferably not greater than 1 nm in RMS value.