The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Jan. 14, 2008
Applicants:
Takaaki Matsuoka, Miyagi, JP;
Kohei Kawamura, Hillsboro, OR (US);
Inventors:
Takaaki Matsuoka, Miyagi, JP;
Kohei Kawamura, Hillsboro, OR (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention is a plasma processing method for forming a film on a substrate, the method including the steps of processing a first material gas with plasma having an electron density W and an electron temperature X, processing a second material gas with plasma having an electron density Y, which is different from the electron density W, and an electron temperature Z, which is different from the electron temperature X, and forming the film on the substrate by reacting the processed first material gas and the processed second material gas.