The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Mar. 17, 2011
Mukesh V. Khare, White Plains, NY (US);
Renee T. MO, Briarcliff Manor, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Richard S. Wise, Newburgh, NY (US);
Hongwen Yan, Somers, NY (US);
Mukesh V. Khare, White Plains, NY (US);
Renee T. Mo, Briarcliff Manor, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Richard S. Wise, Newburgh, NY (US);
Hongwen Yan, Somers, NY (US);
International Business Machines Corporation, Armonk, NC (US);
Abstract
A method of forming a semiconductor device includes forming a transistor gate stack over a substrate having an active area and a shallow trench isolation (STI) region. First sidewall spacers are formed on the transistor gate stack, and an isotropic etch process is applied to isotropically remove an excess portion of a metal layer included within the transistor gate stack, the excess portion left unprotected by the first sidewall spacers. Second sidewall spacers are formed on the transistor gate stack, the second sidewall spacers completely encapsulating the metal layer of the transistor gate stack.