The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Nov. 21, 2008
Yoichiro Tanaka, Santa Clara, CA (US);
Yoichiro Tanaka, Santa Clara, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
A method of making a semiconductor device includes forming a first conductivity type polysilicon layer over a substrate, forming an insulating layer over the first conductivity type polysilicon layer, where the insulating layer comprises an opening exposing the first conductivity type polysilicon layer, and forming an intrinsic polysilicon layer in the opening over the first conductivity type polysilicon layer. A nonvolatile memory device contains a first electrode, a steering element located in electrical contact with the first electrode, a storage element having a U-shape cross sectional shape located over the steering element, and a second electrode located in electrical contact with the storage element.
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