The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
May. 29, 2009
Perrine Batude, Grenoble, FR;
Laurent Clavelier, Grenoble, FR;
Marie-anne Jaud, Grenoble, FR;
Olivier Thomas, Revel, FR;
Maud Vinet, Rives, FR;
Perrine Batude, Grenoble, FR;
Laurent Clavelier, Grenoble, FR;
Marie-Anne Jaud, Grenoble, FR;
Olivier Thomas, Revel, FR;
Maud Vinet, Rives, FR;
Commissariat A L'Energie Atomique, Paris, FR;
Abstract
A microelectronic device including: a substrate surmounted by a stack of layers, at least one first transistor situated at a given level of said stack, at least one second transistor situated at a second level of said stack, above said given level, the first transistor including a gate electrode situated opposite a channel zone of the second transistor, the first transistor and the second transistor being separated by an insulating zone, and said insulating zone being constituted of several different dielectric materials include a first dielectric material and a second dielectric material.