The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Aug. 26, 2010
Tsuo-wen LU, Kaohsiung County, TW;
Tsai-fu Hsiao, Tainan, TW;
Yu-ren Wang, Tainan, TW;
Shu-yen Chan, Hsinchu, TW;
Tsuo-Wen Lu, Kaohsiung County, TW;
Tsai-Fu Hsiao, Tainan, TW;
Yu-Ren Wang, Tainan, TW;
Shu-Yen Chan, Hsinchu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
The invention discloses a method for fabricating a MOS transistor. A substrate having thereon a gate structure is provided. A silicon nitride layer is deposited on the gate structure. A dry etching process is then performed to define a silicon nitride spacer on each sidewall of the gate structure and a recess in a source/drain region on each side of the gate structure. A transitional layer covering the gate structure and the recess is deposited. A pre-epitaxial clean process is performed to remove the transitional layer. The substrate is subjected to a pre-bake process. An epitaxial growth process is performed to grow an embedded SiGe layer in the recess. The disposable silicon nitride spacer is removed.