The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Jan. 31, 2008
Ryosuke Ishii, Amagasaki, JP;
Koji Nakayama, Amagasaki, JP;
Yoshitaka Sugawara, Amagasaki, JP;
Hidekazu Tsuchida, Yokosuka, JP;
Ryosuke Ishii, Amagasaki, JP;
Koji Nakayama, Amagasaki, JP;
Yoshitaka Sugawara, Amagasaki, JP;
Hidekazu Tsuchida, Yokosuka, JP;
The Kansai Electric Power Co., Inc., Osaka, JP;
Central Research Institute of Electric Power Industry, Tokyo, JP;
Abstract
Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named.