The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2012

Filed:

Sep. 21, 2007
Applicants:

Shinichi Kohno, Kawasaki, JP;

Hisanobu Harada, Kawasaki, JP;

Inventors:

Shinichi Kohno, Kawasaki, JP;

Hisanobu Harada, Kawasaki, JP;

Assignee:

Tokyo Ohka Kogyo Co., Ltd., Kawasaki-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/36 (2006.01); G03F 7/22 (2006.01); G03F 7/30 (2006.01); G03F 7/039 (2006.01); G03F 7/075 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a pattern including: forming an underlayer film on a support using an underlayer film-forming material, forming a hard mask on the underlayer film using a silicon-based hard mask-forming material, forming a first resist film by applying a chemically amplified positive resist composition to the hard mask, forming a first resist pattern by selectively exposing the first resist film through a first mask pattern and then performing developing, forming a first pattern by etching the hard mask using the first resist pattern as a mask, forming a second resist film by applying a chemically amplified positive silicon-based resist composition to the first pattern and the underlayer film, forming a second resist pattern by selectively exposing the second resist film through a second mask pattern and then performing developing, and forming a second pattern by etching the underlayer film using the first pattern and the second resist pattern as a mask.


Find Patent Forward Citations

Loading…