The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Mar. 29, 2007
Ryou Mochizuki, Nirasaki, JP;
Jun Yashiro, Nirasaki, JP;
Ryou Mochizuki, Nirasaki, JP;
Jun Yashiro, Nirasaki, JP;
Tokyo Electron Limited, Tokyo-To, JP;
Abstract
Disclosed is a method of etching a substrate having a layered structure in which a photoresist mask with a pattern, a coating film made of silicon oxide, and an organic film are laminated in that order from the top. Before etching the coating film of silicon oxide, a deposit is deposited on the photoresist mask by using plasma generated from a hydrocarbon gas such as CHgas so as to narrow the size of openings in the pattern of the photoresist mask. The pattern of the photoresist mask is well transferred to the organic film through the coating film, and a pattern with openings having a high aspect ratio can be formed in the organic film and toppling of the pattern in the organic film can be prevented. The organic film with the transferred pattern is used as an etch mask for etching the underlying layer.