The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2012

Filed:

Aug. 16, 2006
Applicants:

Markondeya Raj Pulugurtha, Atlanta, GA (US);

Devarajan Balaraman, Atlanta, GA (US);

Isaac R. Abothu, Atlanta, GA (US);

Rao Tummala, Stone Mountain, GA (US);

Farrokh Ayazi, Atlanta, GA (US);

Inventors:

Markondeya Raj Pulugurtha, Atlanta, GA (US);

Devarajan Balaraman, Atlanta, GA (US);

Isaac R. Abothu, Atlanta, GA (US);

Rao Tummala, Stone Mountain, GA (US);

Farrokh Ayazi, Atlanta, GA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed are three-dimensional dielectric structures on high surface area electrodes and fabrication methods. Exemplary structures comprise a copper foil substrate, trench electrodes or high surface area porous electrode structures formed on the substrate, a insulating thin film formed on the surface and laminating the foil on a organic substrate. A variety of materials may be used to make the films including perovksite ceramics such as barium titanate, strontium titanate, barium strontium titanate (BST), lead zirconate titanate (PZT); other intermediate dielectric constant films such as zinc oxide, aluminum nitride, silicon nitride; typical paraelectrics such as tantalum oxide, alumina, and titania. The films may be fabricated using sol-gel, hydrothermal synthesis, anodization or vapor deposition techniques.


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