The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Aug. 11, 2009
Cheng-hui Shen, Hsin-Chu, TW;
Don Berrian, Topsfield, MA (US);
Cheng-Hui Shen, Hsin-Chu, TW;
Don Berrian, Topsfield, MA (US);
Advanced Ion Beam Technology, Inc., Hsin-Chu, TW;
Abstract
Initially, an ion beam is formed as an elongated shape incident on a wafer, where the shape has a length along a first axis longer than a diameter of the wafer, and a width along a second axis shorter than the diameter of the wafer. Then, a center of the wafer is moved along a scan path intersecting the ion beam at a movement velocity, and the wafer is rotated around at a rotation velocity simultaneously. During the simultaneous movement and rotation, the wafer is totally overlapped with the ion beam along the first axis when the wafer intersects with the ion beam, and the rotation velocity is at most a few times of the movement velocity. Both the movement velocity and the rotation velocity can be a constant or have a velocity profile relative to a position of the ion beam across the wafer.