The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Sep. 29, 2006
Gert Leusink, Saltpoint, NY (US);
Gert Leusink, Saltpoint, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of forming a semiconductor device includes providing a substrate in a vacuum processing tool, the substrate having a strained Ge-containing layer on the substrate and a Si-containing layer on the strained Ge-containing layer, maintaining the substrate at a temperature less than 700° C., and exposing the Si-containing layer to oxidation radicals in an UV-assisted oxidation process to form a Si-containing dielectric layer while minimizing oxidation and strain relaxation in the underlying strained Ge-containing layer. A semiconductor device containing a substrate, a strained Ge-containing layer on the substrate, and a Si-containing dielectric layer formed on the strained Ge-containing layer is provided. The semiconductor device can further contain a gate electrode layer on the Si-containing dielectric layer or a high-k layer on the Si-containing dielectric layer and a gate electrode layer on the high-k layer.