The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Aug. 12, 2010
Pei-yu Chou, Tainan County, TW;
Jiunn-hsiung Liao, Tainan Hsien, TW;
Pei-Yu Chou, Tainan County, TW;
Jiunn-Hsiung Liao, Tainan Hsien, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of forming a contact hole is provided. A pattern is formed in a photo resist layer. The pattern is exchanged into a silicon photo resist layer to form a first opening. Another pattern is formed in another photo resist layer. The pattern is exchanged into a silicon photo resist layer to form a second opening. The pattern having the first, and second openings is exchanged into the interlayer dielectric layer, and etching stop layer to form the contact hole. The present invention has twice exposure processes and twice etching processes to form the contact hole having small distance.