The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 01, 2012

Filed:

Sep. 05, 2007
Applicants:

Kazuhide Hasebe, Nirasaki, JP;

Yoshihiro Ishida, Nirasaki, JP;

Takehiko Fujita, Nirasaki, JP;

Jun Ogawa, Nirasaki, JP;

Shigeru Nakajima, Nirasaki, JP;

Inventors:

Kazuhide Hasebe, Nirasaki, JP;

Yoshihiro Ishida, Nirasaki, JP;

Takehiko Fujita, Nirasaki, JP;

Jun Ogawa, Nirasaki, JP;

Shigeru Nakajima, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/513 (2006.01);
U.S. Cl.
CPC ...
Abstract

An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a source gas containing a film source element and no amino group, a second process gas including an oxidizing gas, and a third process gas including a preliminary treatment gas. A first step includes an excitation period of supplying the third process gas excited by an exciting mechanism, thereby performing a preliminary treatment on the target substrate by preliminary treatment gas radicals. A second step performs supply of the first process gas, thereby adsorbing the film source element on the target substrate. A third step includes an excitation period of supplying the second process gas excited by an exciting mechanism, thereby oxidizing the film source element adsorbed on the target substrate by oxidizing gas radicals.


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