The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2012

Filed:

May. 12, 2010
Applicants:

Alessandro Torsi, Avezzano, IT;

Carlo Musilli, Avezzano, IT;

Seiichi Aritome, Zhudong Town, TW;

Inventors:

Alessandro Torsi, Avezzano, IT;

Carlo Musilli, Avezzano, IT;

Seiichi Aritome, Zhudong Town, TW;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A punch-through disturb effect in a memory device can be reduced by biasing a selected word line at a program voltage to program a selected memory cell, biasing word lines on the drain side of the series string with a Vvoltage, turning off an adjacent memory cell to the selected memory cell, and biasing remaining word lines on the source side of the turned-off memory cell with a Vvoltage that is less than V.


Find Patent Forward Citations

Torsi, Alessandro. (2012). Reduction of punch-through disturb during programming of a memory device (U.S. Patent No. 8164950). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8164950

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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