The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Jan. 06, 2009
Maharaj Mukherjee, Wappingers Falls, NY (US);
James A. Culp, Newburgh, NY (US);
Scott M. Mansfield, Hopewell Junction, NY (US);
Kafai Lai, Poughkeepsie, NY (US);
Alan E. Rosenbluth, Yorktown Heights, NY (US);
Maharaj Mukherjee, Wappingers Falls, NY (US);
James A. Culp, Newburgh, NY (US);
Scott M. Mansfield, Hopewell Junction, NY (US);
Kafai Lai, Poughkeepsie, NY (US);
Alan E. Rosenbluth, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method is provided for modeling lithographic processes in the design of photomasks for the manufacture of semiconductor integrated circuits, and more particularly for simulating intermediate range flare effects. For a region of influence (ROI) from first ROIof about 5λ/NA to distance ROIwhen the point spread function has a slope that is slowly varying according to a predetermined criterion, then mask shapes at least within the distance range from ROIto ROIare smoothed prior to computing the SOCS convolutions. The method provides a fast method for simulating intermediate range flare effects with sufficient accuracy.