The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8158306 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 17, 2012

Filed:

Sep. 20, 2010
Applicants:

Kuei Shun Chen, Hsin-Chu, TW;

Chin-hsiang Lin, Hsinchu, TW;

Chih-cheng Chiu, Xinzhung, TW;

Inventors:

Kuei Shun Chen, Hsin-Chu, TW;

Chin-Hsiang Lin, Hsinchu, TW;

Chih-Cheng Chiu, Xinzhung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2012.01);
U.S. Cl.
CPC ...
Abstract

A photomask set includes at least two masks that combine to form a device pattern in a semiconductor device. Orthogonal corners may be produced in a semiconductor device pattern to include one edge defined by a first mask and an orthogonal edge defined by a second mask. The mask set may include a first mask with compensation features and a second mask with void areas overlaying the compensation features when the first and second masks are aligned with one another, such that the compensation features are removed when patterns are successfully formed from the first and second masks. The compensation features alleviate proximity effects during the formation of device features.


Find Patent Forward Citations

Chen, Kuei. (2012). Method and system for combining photomasks to form semiconductor devices (U.S. Patent No. 8158306). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8158306

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