The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Jan. 29, 2009
Matthew J. Sendelbach, Fishkill, NY (US);
Alok Vaid, Beacon, NY (US);
Shahin Zangooie, San Jose, CA (US);
Matthew J. Sendelbach, Fishkill, NY (US);
Alok Vaid, Beacon, NY (US);
Shahin Zangooie, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Advanced Micro Devices, Sunnyvale, CA (US);
GlobalFoundries Inc., Milpitas, CA (US);
Abstract
Disclosed is an electrochemical etching system with localized etching capability. The system allows multiple different porous semiconductor regions to be formed on a single semiconductor wafer. Localized etching is achieved through the use of one or more stationary and/or movable computer-controlled inner containers operating within an outer container. The outer container holds the electrolyte solution and acts as an electrolyte supply source for the inner container(s). The inner container(s) limit the size of the etched region of the semiconductor wafer by confining the electric field. Additionally, the current amount passing through each inner container during the electrochemical etching process can be selectively adjusted to achieve a desired result within the etched region. Localized etching of sub-regions within each etched region can also be achieved through the use of different stationary and/or moveable electrode structures and shields within each inner container. Also disclosed are associated method embodiments.