The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Jan. 25, 2010
Monir El-diwany, Saratoga, CA (US);
Alexei Sadovnikov, Sunnyvale, CA (US);
Jamal Ramdani, Scarborough, ME (US);
Monir El-Diwany, Saratoga, CA (US);
Alexei Sadovnikov, Sunnyvale, CA (US);
Jamal Ramdani, Scarborough, ME (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A bipolar transistor structure comprises a semiconductor substrate having a first conductivity type, a collector region having a second conductivity type that is opposite the first conductivity type formed in a substrate active device region defined by isolation dielectric material formed in an upper surface of the semiconductor substrate, a base region that includes an intrinsic base region having the first conductivity type formed over the collector region and an extrinsic base region having the second conductivity type formed over the isolation dielectric material, and a sloped in-situ doped emitter plug having the second conductivity type formed on the intrinsic base region.