The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Mar. 31, 2009
Mihaela Balseanu, Sunnyvale, CA (US);
Christopher D. Bencher, San Jose, CA (US);
Yongmei Chen, San Jose, CA (US);
LI Yan Miao, San Francisco, CA (US);
Victor Nguyen, Novato, CA (US);
Isabelita Roflox, Union City, CA (US);
Li-qun Xia, Cupertino, CA (US);
Derek R. Witty, Fremont, CA (US);
Mihaela Balseanu, Sunnyvale, CA (US);
Christopher D. Bencher, San Jose, CA (US);
Yongmei Chen, San Jose, CA (US);
Li Yan Miao, San Francisco, CA (US);
Victor Nguyen, Novato, CA (US);
Isabelita Roflox, Union City, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Derek R. Witty, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and apparatus are provided to form spacer materials adjacent substrate structures. In one embodiment, a method is provided for processing a substrate including placing a substrate having a substrate structure adjacent a substrate surface in a deposition chamber, depositing a spacer layer on the substrate structure and substrate surface, and etching the spacer layer to expose the substrate structure and a portion of the substrate surface, wherein the spacer layer is disposed adjacent the substrate structure. The spacer layer may comprise a boron nitride material. The spacer layer may comprise a base spacer layer and a liner layer, and the spacer layer may be etched in a two-step etching process.