The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2012

Filed:

Dec. 03, 2009
Applicants:

Yijie Zhao, Boise, ID (US);

Akira Goda, Boise, ID (US);

Jian LI, Boise, ID (US);

Haitao Liu, Meridian, ID (US);

Inventors:

Yijie Zhao, Boise, ID (US);

Akira Goda, Boise, ID (US);

Jian Li, Boise, ID (US);

Haitao Liu, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for sensing and memory devices are disclosed. One such method for sensing uses a dynamic pass voltage on at least one adjacent memory cell that is adjacent to a selected memory cell for programming. If the adjacent memory cell is not programmed, the pass voltage is reduced on the adjacent memory cell. The adjacent memory cell can be on the drain side, the source side, or both drain and source sides of the selected memory cell.


Find Patent Forward Citations

Zhao, Yijie. (2012). Dynamic pass voltage for sense operation in a memory device (U.S. Patent No. 8144516). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8144516

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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