The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Mar. 31, 2006
Russell Low, Rowley, MA (US);
Piortr R. Lubicki, Peabody, MA (US);
D. Jeffrey Lischer, Acton, MA (US);
Steve Krause, Ipswich, MA (US);
Eric Hermanson, Georgetown, MA (US);
Joseph C. Olson, Beverly, MA (US);
Russell Low, Rowley, MA (US);
Piortr R. Lubicki, Peabody, MA (US);
D. Jeffrey Lischer, Acton, MA (US);
Steve Krause, Ipswich, MA (US);
Eric Hermanson, Georgetown, MA (US);
Joseph C. Olson, Beverly, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.