The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Sep. 03, 2009
Applicants:
Woo Jin Lee, Tama, JP;
Akira Shimizu, Sagamihara, JP;
Inventors:
Woo Jin Lee, Tama, JP;
Akira Shimizu, Sagamihara, JP;
Assignee:
ASM Japan K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 8/00 (2006.01); C23C 16/00 (2006.01); H05H 1/24 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.
Published as: