The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2012

Filed:

Feb. 16, 2011
Applicants:

Maarten Marinus Johannes Wilhelmus Van Herpen, Heesch, NL;

Levinus Pieter Bakker, Helmond, NL;

Vadim Yevgenyevich Banine, Deurne, NL;

Derk Jan Wilfred Klunder, Geldrop, NL;

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/54 (2006.01); G03B 27/42 (2006.01);
U.S. Cl.
CPC ...
Abstract

A lithographic apparatus comprising a support configured to support a patterning device; a substrate table configured to hold a substrate; a projection system configured to project a pattern imparted to a radiation beam by the patterning device onto a target portion of the substrate; and a first multi-layer mirror and a second multi-layer mirror, the first multi-layer mirror and the second multi-layer minor being arranged along a path of the radiation beam, the first multi-layer minor and the second multi-layer mirror each having a reflectivity of at least about 50% in extreme ultra violet wavelength range, and the first multi-layer mirror configured to reduce radiation having wavelengths in a first wavelength range and the second multi-layer minor configured to reduce radiation having wavelengths in a second wavelength range different from the first wavelength range, wherein the first wavelength range and the second wavelength range are outside extreme ultra violet wavelength range.


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