The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Jul. 23, 2009
Francois J. Henley, Aptos, CA (US);
Sien Kang, Dublin, CA (US);
Zuqin Liu, Palo Alto, CA (US);
LU Tian, Milpitas, CA (US);
Francois J. Henley, Aptos, CA (US);
Sien Kang, Dublin, CA (US);
Zuqin Liu, Palo Alto, CA (US);
Lu Tian, Milpitas, CA (US);
Silicon Genesis Corporation, San Jose, CA (US);
Abstract
A method of fabricating a thickness of silicon material includes providing a silicon ingot material having a surface region and introducing a plurality of particles having an energy of about 1-5 MeV through the surface region to a depth to define a cleave region and a thickness of detachable material between the cleave region and the surface region. Additionally, the method includes processing the silicon ingot material to free the thickness of detachable material at a vicinity of the cleave region and causing formation of a free-standing thickness of material characterized by a carrier lifetime about 10 microseconds and a thickness ranging from about 20 microns to about 150 microns with a thickness variation of less than about five percent. Furthermore, the method includes treating the free-standing thickness of material using a thermal treatment process to recover the carrier lifetime to about 200 microseconds and greater.