The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Apr. 03, 2009
Katsuya Takemura, Joetsu, JP;
Jun Hatakeyama, Joetsu, JP;
Kazumi Noda, Joetsu, JP;
Mutsuo Nakashima, Joetsu, JP;
Masaki Ohashi, Joetsu, JP;
Toshinobu Ishihara, Joetsu, JP;
Katsuya Takemura, Joetsu, JP;
Jun Hatakeyama, Joetsu, JP;
Kazumi Noda, Joetsu, JP;
Mutsuo Nakashima, Joetsu, JP;
Masaki Ohashi, Joetsu, JP;
Toshinobu Ishihara, Joetsu, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer.