The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Dec. 28, 2006
Manabu Sato, Nirasaki, JP;
Yoshiki Igarashi, Nirasaki, JP;
Yoshimitsu Kon, Nirasaki, JP;
Masanobu Honda, Nirasaki, JP;
Manabu Sato, Nirasaki, JP;
Yoshiki Igarashi, Nirasaki, JP;
Yoshimitsu Kon, Nirasaki, JP;
Masanobu Honda, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A plasma processing apparatus includes a first and a second electrode disposed to face each other in a processing chamber, the second electrode supporting a substrate; a first RF power supply for applying a first RF power of a higher frequency to the second electrode; a second RF power supply for applying a second RF power of a lower frequency to the second electrode; and a DC power source for applying a DC voltage to the first electrode. In a plasma etching method for etching a substrate by using the plasma processing apparatus, the first and the second radio frequency power are applied to the second electrode to convert a processing gas containing no CF-based gas into a plasma and a DC voltage is applied to the first electrode, to thereby etch an organic film or an amorphous carbon film on the substrate by using a silicon-containing mask.