The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Jan. 26, 2007
Tzu-hsuan Hsu, Kaohsiung, TW;
Dun-nian Yaung, Taipei, TW;
Shou-gwo Wuu, Hsin-Chu, TW;
Ho-ching Chien, Hsinchu County, TW;
Chien-hsien Tseng, Hsinchu, TW;
Jeng-shyan Lin, Tainan, TW;
Tzu-Hsuan Hsu, Kaohsiung, TW;
Dun-Nian Yaung, Taipei, TW;
Shou-Gwo Wuu, Hsin-Chu, TW;
Ho-Ching Chien, Hsinchu County, TW;
Chien-Hsien Tseng, Hsinchu, TW;
Jeng-Shyan Lin, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.