The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Mar. 30, 2009
Tetsuo Endoh, Sendai, JP;
Masayuki Kohno, Nirasaki, JP;
Syuichiro Otao, Amagasaki, JP;
Minoru Honda, Nirasaki, JP;
Toshio Nakanishi, Nirasaki, JP;
Tetsuo Endoh, Sendai, JP;
Masayuki Kohno, Nirasaki, JP;
Syuichiro Otao, Amagasaki, JP;
Minoru Honda, Nirasaki, JP;
Toshio Nakanishi, Nirasaki, JP;
Tohoku University, , JP;
Tokyo Electron Limited, , JP;
Abstract
To manufacture a MOS memory device having a dielectric film laminate in which adjacent dielectric films have band-gaps of different magnitudes, a plasma processing device which transmits microwaves to a chamber by means of a planar antenna having a plurality of holes is used to perform plasma CVD under pressure conditions that differ from at least pressure conditions used when forming the adjacent dielectric films, and the dielectric films are sequentially formed by altering the band-gaps of the adjacent dielectric films that constitute the dielectric film laminate.