The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2012

Filed:

Aug. 04, 2009
Applicants:

Anand Chadrashekar, Sunnyvale, CA (US);

Raashina Humayun, Fremont, CA (US);

Michal Danek, Cupertino, CA (US);

Aaron R. Fellis, Sunnyvale, CA (US);

Sean Chang, Cupertino, CA (US);

Inventors:

Anand Chadrashekar, Sunnyvale, CA (US);

Raashina Humayun, Fremont, CA (US);

Michal Danek, Cupertino, CA (US);

Aaron R. Fellis, Sunnyvale, CA (US);

Sean Chang, Cupertino, CA (US);

Assignee:

Novellus Systems, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of filling high aspect ratio features provided on partially manufactured semiconductor substrates with tungsten-containing materials are provided. In certain embodiments, the methods include partial filling a high aspect ratio feature with a layer of tungsten-containing materials and selective removal of the partially filled materials from the feature cavity. Substrates processed using these methods have improved step coverage of the tungsten-containing materials filled into the high aspect ratio features and reduced seam sizes.

Published as:
KR20110014069A; TW201105813A; JP2011035366A; US8119527B1; KR101327258B1; TWI495756B;

Find Patent Forward Citations

Loading…