The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Sep. 29, 2010
Sung-hoon Lee, Yongin-si, KR;
Sungil Park, Suwon-si, KR;
Young-gu Jin, Hwaseong-si, KR;
Jongseob Kim, Suwon-si, KR;
Ki-ha Hong, Seoul, KR;
Sung-Hoon Lee, Yongin-si, KR;
Sungil Park, Suwon-si, KR;
Young-Gu Jin, Hwaseong-si, KR;
Jongseob Kim, Suwon-si, KR;
Ki-Ha Hong, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor memory device performing an erase operation using an erase gate and a method of manufacturing the same are provided. The memory device may include a charge trap layer storing a first charge transfer medium having a first polarity and at least one erase gate. The at least one erase gate may be formed below the charge trap layer. A second charge transfer medium, which has a second polarity opposite to the first polarity, may be stored in the at least one erase gate. During the erase operation, the second charge transfer medium migrates to the charge trap layer causing the first charge transfer medium to combine with the second charge transfer medium.