The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Feb. 03, 2009
Satoru Takasawa, Sammu, JP;
Masaki Takei, Sammu, JP;
Hirohisa Takahashi, Sammu, JP;
Hiroaki Katagiri, Sammu, JP;
Sadayuki Ukishima, Sammu, JP;
Noriaki Tani, Sammu, JP;
Satoru Ishibashi, Sammu, JP;
Tadashi Masuda, Tomisato, JP;
Satoru Takasawa, Sammu, JP;
Masaki Takei, Sammu, JP;
Hirohisa Takahashi, Sammu, JP;
Hiroaki Katagiri, Sammu, JP;
Sadayuki Ukishima, Sammu, JP;
Noriaki Tani, Sammu, JP;
Satoru Ishibashi, Sammu, JP;
Tadashi Masuda, Tomisato, JP;
Ulvac, Inc., Chigasaki-Shi, JP;
Abstract
A conductive film having high adhesion and low specific resistance is formed. A target containing copper as a main component is sputtered in vacuum ambience while an oxygen gas introduced, and then, a conductive film containing copper as a main component and additive metals, such as Ti or Zr, is formed. Such a conductive film has high adhesion to a silicon layer and a glass substrate and is hardly peeled off from the substrate. Furthermore, the specific resistance is low and the contact resistance to a transparent conductive film is also low. Thus, no deterioration in the electric characteristics occurs even when the conductive film is used for an electrode film. Accordingly, the conductive film formed by the present invention suited for TFT, and electrode films and barrier films of semiconductor elements, in particular.