The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Nov. 01, 2010
Applicants:
Martin Trentzsch, Dresden, DE;
Thorsten Kammler, Ottendorf-Okrilla, DE;
Rolf Stephan, Dresden, DE;
Inventors:
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/335 (2006.01); H01L 21/8232 (2006.01);
U.S. Cl.
CPC ...
Abstract
By performing a heat treatment on the basis of a hydrogen ambient, exposed silicon-containing surface portions may be reorganized prior to the formation of gate dielectric materials. Hence, the interface quality and the material characteristics of the gate dielectrics may be improved, thereby reducing negative bias temperature instability effects in highly scaled P-channel transistors.
Trentzsch, Martin. (2012). Reducing the creation of charge traps at gate dielectrics in mos transistors by performing a hydrogen treatment (U.S. Patent No. 8119461). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8119461
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile