The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2012

Filed:

May. 17, 2010
Applicants:

Hajime Eda, Kanagawa, JP;

Yukiteru Matsui, Kanagawa, JP;

Atsushi Shigeta, Mie, JP;

Takatoshi Ono, Oita, JP;

Satoko Seta, Tokyo, JP;

Inventors:

Hajime Eda, Kanagawa, JP;

Yukiteru Matsui, Kanagawa, JP;

Atsushi Shigeta, Mie, JP;

Takatoshi Ono, Oita, JP;

Satoko Seta, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a method of manufacturing a semiconductor device for planarizing a silicon oxide film with chemical mechanical polishing using a silicon film formed on a semiconductor substrate as a stopper film, a surface modification film for hydrophilizing the surface of the silicon film is formed on an upper layer of the polysilicon film, and slurry for the chemical mechanical polishing contains cerium oxide particles, a surface active agent, and resin particles having a cationic or anionic functional group.


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