The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2012

Filed:

May. 28, 2009
Applicants:

Andy Wei, Dresden, DE;

Robert Mulfinger, Dresden, DE;

Thilo Scheiper, Dresden, DE;

Thorsten Kammler, Ottendorf-Okrilla, DE;

Inventors:

Andy Wei, Dresden, DE;

Robert Mulfinger, Dresden, DE;

Thilo Scheiper, Dresden, DE;

Thorsten Kammler, Ottendorf-Okrilla, DE;

Assignee:

Advanced Micro Devices, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

Three-dimensional transistor structures such as FinFETS and tri-gate transistors may be formed on the basis of an enhanced masking regime, thereby enabling the formation of drain and source areas, the fins and isolation structures in a self-aligned manner within a bulk semiconductor material. After defining the basic fin structures, highly efficient manufacturing techniques of planar transistor configurations may be used, thereby even further enhancing overall performance of the three-dimensional transistor configurations.


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