Methods for reducing gate dielectric thinning on trench isolation edges and integrated circuits therefrom

Abstract

A method of fabricating an integrated circuit (IC) including a plurality of MOS transistors and ICs therefrom include providing a substrate having a silicon including surface, and forming a plurality of dielectric filled trench isolation regions in the substrate, wherein the silicon including surface forms trench isolation active area edges along its periphery with the trench isolation regions. A first silicon including layer is deposited, wherein the first silicon including extends from a surface of the trench isolation regions over the trench isolation active area edges to the silicon including surface. The first silicon including layer is completely oxidized to convert the first silicon layer to a silicon oxide layer, wherein the silicon oxide layer provides at least a portion of a gate dielectric for at least one of the plurality of MOS transistors. A patterned gate electrode layer is formed over the gate dielectric, wherein the patterned gate electrode layer extends over at least one of the trench isolation active area edges to the silicon including surface, and fabrication is then completed.