The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Jul. 17, 2009
Tuqiang NI, Shanghai, CN;
Jinyuan Chen, Shanghai, CN;
YE Wang, Shanghai, CN;
Ruoxin Du, Shanghai, CN;
Liang Ouyang, Shanghai, CN;
Tuqiang Ni, Shanghai, CN;
Jinyuan Chen, Shanghai, CN;
Ye Wang, Shanghai, CN;
Ruoxin Du, Shanghai, CN;
Liang Ouyang, Shanghai, CN;
Advanced Micro-Fabrication Equipment, Inc. Asia, Georgetown, Grand Cayman, KY;
Abstract
Systems and methods for removing residual charge from a processed wafer are described. Removal of residual charge eliminates de-chucking failure that may break or damage the wafer. Residual charge is removed by applying a reverse polarity discharging DC voltage to an electrode embedded in an electrostatic chuck (ESC) supporting the wafer, and providing an outlet to the residual charge to ground via a lift pin assembly. Lift pin assembly is kept at the same potential with respect to a pedestal of the ESC to avoid sparking during the application of RF power to generate plasma. A residual charge sensor is included to sense and measure the amount of residual charge, so that the parameters of the reverse polarity discharging voltage can be adjusted in a subsequent de-chucking operation.