The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Jul. 23, 2008
Uwe Griebenow, Markkleeberg, DE;
Kai Frohberg, Niederau, DE;
Christoph Schwan, Dresden, DE;
Kerstin Ruttloff, Hainichen, DE;
Uwe Griebenow, Markkleeberg, DE;
Kai Frohberg, Niederau, DE;
Christoph Schwan, Dresden, DE;
Kerstin Ruttloff, Hainichen, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
By incorporating a carbon species below the channel region of a P-channel transistor prior to the formation of the gate electrode structure, an efficient strain-inducing mechanism may provided, thereby enhancing performance of P-channel transistors. The position and size of the strain-inducing region may be determined on the basis of an implantation mask and respective implantation parameters, thereby providing a high degree of compatibility with conventional techniques, since the strain-inducing region may be incorporated at an early manufacturing stage, directly to respective 'large area' contact elements.