The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Feb. 22, 2010
John F. Kaeding, Mountain View, CA (US);
Dong-seon Lee, Anyang-Si, KR;
Michael Iza, Santa Barbara, CA (US);
Troy J. Baker, Santa Barbara, CA (US);
Hitoshi Sato, Kanagawa, JP;
Benjamin A. Haskell, Santa Barbara, CA (US);
James S. Speck, Goleta, CA (US);
Steven P. Denbaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
John F. Kaeding, Mountain View, CA (US);
Dong-Seon Lee, Anyang-Si, KR;
Michael Iza, Santa Barbara, CA (US);
Troy J. Baker, Santa Barbara, CA (US);
Hitoshi Sato, Kanagawa, JP;
Benjamin A. Haskell, Santa Barbara, CA (US);
James S. Speck, Goleta, CA (US);
Steven P. DenBaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Japan Science and Technology Agency, Saitama Prefecture, JP;
Abstract
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InGaN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InGaN nucleation layer, and cooling the substrate under a nitrogen overpressure.