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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8110042 B1

PDFFull Text
Date of Patent:
Feb. 07, 2012

Filed:

May. 07, 2008

Method for manufacturing single crystal

Applicants:

Yasuhito Narushima, Omura, JP;

Shinichi Kawazoe, Omura, JP;

Fukuo Ogawa, Omura, JP;

Tsuneaki Tomonaga, Omura, JP;

Yasuyuki Ohta, Omura, JP;

Toshimichi Kubota, Omura, JP;

Shinsuke Nishihara, Omura, JP;

Inventors:

Yasuhito Narushima, Omura, JP;

Shinichi Kawazoe, Omura, JP;

Fukuo Ogawa, Omura, JP;

Tsuneaki Tomonaga, Omura, JP;

Yasuyuki Ohta, Omura, JP;

Toshimichi Kubota, Omura, JP;

Shinsuke Nishihara, Omura, JP;

Assignee:

Sumco Techxiv Corporation, Omura-shi, JP;

Attorney:

Holtz, Holtz, Goodman & Chick, PC

Primary Examiner:

Stanley Silverman

Assistant Examiner:

Diana J Liao

Int. Cl.
CPC ...
C30B 15/20 (2006.01); C30B 15/02 (2006.01); C30B 15/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

Using a pulling-up apparatus, an oxygen concentration of the monocrystal at a predetermined position in a pulling-up direction is controlled based on a relationship in which the oxygen concentration of the monocrystal is decreased as a flow rate of the inactive gas at a position directly above a free surface of the dopant-added melt is increased when the monocrystal is manufactured with a gas flow volume in the chamber being in the range of 40 L/min to 400 L/min and an inner pressure in the chamber being in the range of 5332 Pa to 79980 Pa. Based on the relationship, oxygen concentration is elevated to manufacture the monocrystal having a desirable oxygen concentration. Because the oxygen concentration is controlled under a condition corresponding to a condition where the gas flow rate is rather slow, the difference between a desirable oxygen concentration profile of the monocrystal and an actual oxygen concentration profile is reduced.

Find Patent Forward Citations

Narushima, Yasuhito. (2012). Method for manufacturing single crystal (U.S. Patent No. 8110042). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8110042

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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